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AO3401 - HOTTECH

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AO3401 P-Channel MOSFET

FEATURES The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G S Plastic-Encapsulate Mosfets AO3401 P-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=25oC, unless oth.

Features

The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. D G S Plastic-Encapsulate Mosfets AO3401 P-Channel MOSFET 1.Gate 2.Source 3.Drain SOT-23 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A TA=25°C T =70°C Pulsed Drain Current B Power Dissipation A TA=25°C TA=70°C Junction and Storage Temperature Range VDS VGS I IDM PD TJ, TSTG.

The same part from a different manufacturer

Datasheet AO3401 - Kexin AO3401

SMD Type P-Channel Enhancement MOSFET AO3401 (KO3401) MOSFET ■ Features ● VDS (V) =-30V ● ID =-4.2 A (VGS =-10V) ● RD.

Datasheet AO3401 - JinYu AO3401

30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, [email protected] < 64m Ω RDS(ON), [email protected], [email protected] < 75m.

Datasheet AO3401 - Alpha & Omega Semiconductors AO3401

Product Summary The AO3401 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation.

Datasheet AO3401 - VBsemi AO3401

AO3401-VB AO3401-VB Datasheet P-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Typ. 0.046 at VGS = -.

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