AO3434A - Alpha & Omega Semiconductors

AO3434A 30V N-Channel MOSFET

Product Summary The AO3434A combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) Typical ESD protection 30V 4A < 52mΩ < 60mΩ < 78mΩ HBM Clas.

Features

63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 1: Sep. 2012 www.aosmd.com Page 1 of 5 AO3434A Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±10V ±10 µA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.7 1.05 1.5 V ID(ON) On state drain current VGS=10V, VDS=5V 20 A RDS(ON) Static Drain-Source On-Resistanc.