AFN6882S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN5X6-8L ) Features z 100V/20A,RDS(ON)=9.0mΩ@VGS=10V .
z 100V/20A,RDS(ON)=9.0mΩ@VGS=10V z 100V/15A,RDS(ON)=13mΩ@VGS=4.5V z Super high density cell design for extremely low RDS (ON) z DFN5X6-8L package design Application z Networking / Telecom / Server z LED Lighting Applications z Quick Charger Applications z DC-DC Primary Side Switch Pin Define Pin 1~3 4 5~8 Symbol S G D Description Source Gate Drain Ordering Information Part Ordering No. Part Marking Package AFN6882SFN568RG 6882S DFN5X6-8L ※ 6882S : Parts Code ※ YYMMDD : Date Code ※ AFN6882SFN568RG : 13”Tape & Reel ; Pb- Free ; Halogen- Free ©Alfa-M.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | AFN6800WS |
Alfa-MOS |
N-Channel MOSFET | |
2 | AFN6802WS |
Alfa-MOS |
N-Channel MOSFET | |
3 | AFN6804S |
Alfa-MOS |
N-Channel MOSFET | |
4 | AFN6810W |
Alfa-MOS |
N-Channel MOSFET | |
5 | AFN6820 |
Alfa-MOS |
N-Channel MOSFET | |
6 | AFN6830 |
Alfa-MOS |
N-Channel MOSFET | |
7 | AFN6870S |
Alfa-MOS |
N-Channel MOSFET | |
8 | AFN6003S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
9 | AFN6011S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
10 | AFN6018S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
11 | AFN6027S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET | |
12 | AFN6035S |
Alfa-MOS |
N-Channel Enhancement Mode MOSFET |