A1435 - Sanyo

A1435 2SA1435

Ordering number:EN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications · Low frequency general-purpose amplifiers, drivers, muting circuits. Features · Adoption of MBIT process. · High DC current gain (hFE=500 to 1200). · Large current capacity. · Low colletor-to-emitter saturation voltage (VCE(sat)≤0.5V ma.

Features

· Adoption of MBIT process.
· High DC current gain (hFE=500 to 1200).
· Large current capacity.
· Low colletor-to-emitter saturation voltage (VCE(sat)≤0.5V max).
· High VEBO (VEBO≥15V). Package Dimensions unit:mm 2003A [2SA1435] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta = 25˚C Conditions Parameter Collector Cut.