Ordering number:EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features · High fT (Gain-Bandwidth Product). · Small reverse transfer capacitance (Cre=1.3pF). · Adoption of FBET process. Package Dimensions unit:mm 2006A [2SA1433] Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-.
· High fT (Gain-Bandwidth Product).
· Small reverse transfer capacitance (Cre=1.3pF).
· Adoption of FBET process.
Package Dimensions
unit:mm 2006A
[2SA1433]
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature
Symbol
VCBO VCEO VEBO
IC ICP PC Tj
Tstg
Conditions
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current Emitter Cutoff Current DC Current Gain .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | A1430 |
Toshiba Semiconductor |
2SA1430 | |
2 | A1431 |
Toshiba Semiconductor |
2SA1431 | |
3 | A1432 |
Toshiba Semiconductor |
2SA1432 | |
4 | A1434 |
Sanyo |
2SA1434 | |
5 | A1435 |
Sanyo |
2SA1435 | |
6 | A1436 |
Sanyo |
2SA1436 | |
7 | A1437 |
Sanyo |
2SA1437 | |
8 | A1402 |
Sanyo |
2SA1402 | |
9 | A1403 |
Sanyo |
2SA1403 | |
10 | A1404 |
Sanyo |
2SA1404 | |
11 | A1405 |
Sanyo |
2SA1405 | |
12 | A1406 |
Sanyo |
2SA1406 |