TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1430 Strobe Flash Applications Medium Power Amplifier Applications 2SA1430 Unit: mm • High DC current gain and excellent hFE linearity : hFE (1) = 140 to 600 (VCE = −1 V, IC = −0.5 A) : hFE (2) = 60 (min), 120 (typ.) (VCE = −1 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −0.5 V (max) (IC.
he significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 http://store.iiic.cc/ 2006-11-09 Electrical Characteristics (Ta = 25°C) Characteristics Symbol Test C.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | A1431 |
Toshiba Semiconductor |
2SA1431 | |
2 | A1432 |
Toshiba Semiconductor |
2SA1432 | |
3 | A1433 |
Sanyo |
2SA1433 | |
4 | A1434 |
Sanyo |
2SA1434 | |
5 | A1435 |
Sanyo |
2SA1435 | |
6 | A1436 |
Sanyo |
2SA1436 | |
7 | A1437 |
Sanyo |
2SA1437 | |
8 | A1402 |
Sanyo |
2SA1402 | |
9 | A1403 |
Sanyo |
2SA1403 | |
10 | A1404 |
Sanyo |
2SA1404 | |
11 | A1405 |
Sanyo |
2SA1405 | |
12 | A1406 |
Sanyo |
2SA1406 |