A1431 - Toshiba Semiconductor

A1431 2SA1431

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1431 Strobe Flash Applications Medium Power Amplifier Applications 2SA1431 Unit: mm • High DC current gain and excellent hFE linearity : hFE(1) = 100 to 320 (VCE = −2 V, IC = −0.5 A) : hFE(2) = 70 (min) (VCE = −2 V, IC = −4 A) • Low saturation voltage: VCE (sat) = −1.0 V (max) (IC = −4 A, IB = .

Features

or-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance ICBO IEBO V (BR) CEO V (BR) EBO VCB = −35 V, IE = 0 VEB = −8 V, IC = 0 IC = −10 mA, IB = 0 IE = −1 mA, IC = 0 hFE (1) (Note 2) VCE = −2 V, IC = −0.5 A hFE (2) VCE (sat) VCE = −2 V, IC = −4 A IC = −4 A, IB = −0.1 A VBE VCE = −2 V, IC = −4 A fT VCE = −2 V, IC = −0.5 A Cob VCB = −10 V, IE = 0, f = 1 MHz Note 2: hFE (1) classification O: 100 to 200, Y: 160 to 320 Min Typ. Max Unit ― ― −100 nA ― ― −100 nA .