5DL2CZ47A,5FL2CZ47A,5GL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 5DL2CZ47A, 5FL2CZ47A, 5GL2CZ47A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Unit: mm z Repetitive Peak Reverse Voltage : VRRM = 200 V, 300 V, 400V z Average Output Rectified Current : IO = 5 A z Ultra Fast Reverse-Recovery Time : trr.
.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ELECTRICAL CHARACTERISTICS (Ta = 25°C) CHARACTERISTIC SYMBOL Peak Forward Voltage (Note 1) 5DL2CZ47A 5FL2CZ47A 5GL2CZ47A Repetitive Peak Reverse.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 5DL2C41A |
Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK | |
2 | 5DL2C48A |
Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK | |
3 | 5DLZ47A |
Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY RECTIFIER | |
4 | 5D-18 |
ETC |
THERMOPILE TYPE INFRARED SENSOR | |
5 | 5D-xx |
ETC |
THERMOPILE TYPE INFRARED SENSOR | |
6 | 5DF60L |
STMicroelectronics |
N-channel Power MOSFET | |
7 | 5DG2Z11 |
Toshiba |
Rectifier Stack / High Speed Center Tap | |
8 | 5DG2Z41 |
Toshiba |
Rectifier Stack / High Speed Center Tap |