S1(1) S2(3) This Power MOSFET has been developed using STMicroelectronics' unique SC12820 STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and application.
Order code
VDS
RDS(on) max.
ID
4 1
STS5DNF60L
60 V
45 mΩ
5A
SO-8
D1(7, 8)
D2(5, 6)
• AEC-Q101 qualified
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate charge
G1(2)
G2(4)
Applications
• Switching applications
Description
S1(1)
S2(3)
This Power MOSFET has been developed using STMicroelectronics' unique
SC12820 STripFET process, which is specifically designed to minimize input capacitance and
gate charge. This renders the device suitable for use as primary switch in advanced
high-efficiency isolated DC-DC converters for telecom and computer applications,
.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 5D-18 |
ETC |
THERMOPILE TYPE INFRARED SENSOR | |
2 | 5D-xx |
ETC |
THERMOPILE TYPE INFRARED SENSOR | |
3 | 5DG2Z11 |
Toshiba |
Rectifier Stack / High Speed Center Tap | |
4 | 5DG2Z41 |
Toshiba |
Rectifier Stack / High Speed Center Tap | |
5 | 5DL2C41A |
Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK | |
6 | 5DL2C48A |
Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK | |
7 | 5DL2CZ47A |
Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK | |
8 | 5DLZ47A |
Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY RECTIFIER |