5DL2C48A - Toshiba Semiconductor

5DL2C48A SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK

5DL2C48A,5FL2C48A,U5DL2C48A,U5FL2C48A TOSHIBA HighEfficiencyDiodeStack (HED) Silicon Epitaxial Type 5DL2C48A, 5FL2C48A, U5DL2C48A, U5FL2C48A Switching Mode Power Supply Application Converter & Chopper Application · Repetitive peak reverse voltage: VDRM = 200, 300 V · Average output rectified current: IO = 5 A · Ultra fast reverse-recovery time: trr = 35 ns.

Features

ics 5DL2C48A Peak forward voltage U5DL2C48A 5FL2C48A U5FL2C48A Repetitive peak reverse current Reverse recovery time Forward recovery time Thermal resistance Symbol Test Condition VFM IFM = 2.5 A IRRM trr tfr Rth (j-c) VRRM = Rated IF = 2 A, di/dt = -20 A/ms IF = 1 A DC total, junction to case Typ. Max Unit ¾ 0.98 V ¾ 1.3 ¾ 10 mA ¾ 35 ns 100 ns ¾ 3.5 °C/W VFM, IRRM, trr, tfr: A Value of one cell. Marking
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*3 5DL2C 5DL2C48A, U5DL2C48A
*1 Mark Type 5FL2C 5FL2C48A, U5FL2C48A
*2 A Lot number Month of January to December manufac- are denoted by letter A t.