5DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 5DL2C41A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Unit: mm l Repetitive Peak Reverse Voltage l Average Output Rectified Current l Ultra Fast Reverse-Recovery Time : VRRM = 200V : IO = 5A : trr = 35ns MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Repe.
= 200V
trr tfr Rth (j−c)
IF = 2A, di / dt = −20A / µs IF = 1.0A DC Total, Junction to Case
TYP. MAX UNIT ― 0.98 V ― 10 µA
― 35 ns ― 100 ns ― 4.0 °C / W
POLARITY
MARKING
* 1 MARK
*2 A
5DL2C
*3
1 2001-07-13
5DL2C41A
2 2001-07-13
5DL2C41A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA product.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 5DL2C48A |
Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK | |
2 | 5DL2CZ47A |
Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK | |
3 | 5DLZ47A |
Toshiba Semiconductor |
SILICON EPITAXIAL TYPE HIGH EFFICIENCY RECTIFIER | |
4 | 5D-18 |
ETC |
THERMOPILE TYPE INFRARED SENSOR | |
5 | 5D-xx |
ETC |
THERMOPILE TYPE INFRARED SENSOR | |
6 | 5DF60L |
STMicroelectronics |
N-channel Power MOSFET | |
7 | 5DG2Z11 |
Toshiba |
Rectifier Stack / High Speed Center Tap | |
8 | 5DG2Z41 |
Toshiba |
Rectifier Stack / High Speed Center Tap |