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5DL2C41A - Toshiba Semiconductor

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5DL2C41A SILICON EPITAXIAL TYPE HIGH EFFICIENCY DIODE STACK

5DL2C41A TOSHIBA HIGH EFFICIENCY DIODE STACK (HED) SILICON EPITAXIAL TYPE 5DL2C41A SWITCHING MODE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION Unit: mm l Repetitive Peak Reverse Voltage l Average Output Rectified Current l Ultra Fast Reverse-Recovery Time : VRRM = 200V : IO = 5A : trr = 35ns MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Repe.

Features

= 200V trr tfr Rth (j−c) IF = 2A, di / dt = −20A / µs IF = 1.0A DC Total, Junction to Case TYP. MAX UNIT ― 0.98 V ― 10 µA ― 35 ns ― 100 ns ― 4.0 °C / W POLARITY MARKING
* 1 MARK
*2 A 5DL2C
*3 1 2001-07-13 5DL2C41A 2 2001-07-13 5DL2C41A RESTRICTIONS ON PRODUCT USE 000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA product.

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