This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-e.
Order code
VDS
RDS(on) max.
ID
STP50N65DM6
650 V
91 mΩ
33 A
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 50N65DM2 |
STMicroelectronics |
N-Channel MOSFET | |
2 | 50N60 |
IXYS |
IXRH50N60 | |
3 | 50N60A |
IXYS |
IGBT | |
4 | 50N60AS |
IXYS |
IGBT | |
5 | 50N60T |
Infineon |
IKW50N60T | |
6 | 50N02-09 |
Vishay Siliconix |
SUB50N02-09 | |
7 | 50N024 |
Vishay Siliconix |
SUD50N024 | |
8 | 50N02409PU54A |
Vishay Intertechnology |
SU50N02409PU54A | |
9 | 50N025-05P |
Vishay Siliconix |
SUD50N025-05P | |
10 | 50N03 |
Tuofeng |
Power Transistor | |
11 | 50N03 |
KIA |
N-CHANNEL MOSFET | |
12 | 50N03 |
GFO |
MOSFET |