HiPerFASTTM IGBT Surface Mountable IXGH50N60A IXGH50N60AS VCES = 600 V IC25 = 75 A VCE(sat) = 2.7 V t = 275 ns fi Symbol Test Conditions Maximum Ratings VCES VCGR VGES V GEM IC25 IC90 ICM SSOA (RBSOA) TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 Ω Clampe.
l International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD l High frequency IGBT l High current handling capability l 2nd generation HDMOSTM process l MOS Gate turn-on - drive simplicity Applications l AC motor speed control l DC servo and robot drives l DC choppers l Uninterruptible power supplies (UPS) l Switch-mode and resonant-mode power supplies Advantages l High power density l Suitable for surface mounting l Switching speed for high frequency applications l Easy to mount with 1 screw, TO-247 (insulated mounting screw hole) © 1996 IXYS All rights reserved .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 50N60 |
IXYS |
IXRH50N60 | |
2 | 50N60AS |
IXYS |
IGBT | |
3 | 50N60T |
Infineon |
IKW50N60T | |
4 | 50N65DM2 |
STMicroelectronics |
N-Channel MOSFET | |
5 | 50N65DM6 |
STMicroelectronics |
N-Channel MOSFET | |
6 | 50N02-09 |
Vishay Siliconix |
SUB50N02-09 | |
7 | 50N024 |
Vishay Siliconix |
SUD50N024 | |
8 | 50N02409PU54A |
Vishay Intertechnology |
SU50N02409PU54A | |
9 | 50N025-05P |
Vishay Siliconix |
SUD50N025-05P | |
10 | 50N03 |
Tuofeng |
Power Transistor | |
11 | 50N03 |
KIA |
N-CHANNEL MOSFET | |
12 | 50N03 |
GFO |
MOSFET |