Advanced Technical Information IGBT with Reverse Blocking capability IXRH 50N80 IXRH 50N60 VCES = 600 / 800V IC25 = 60 A VCE(sat) = 2.5 V tf = 75 ns TO-247 AD G C E C G C (TAB) C = Collector, TAB = Collector E G = Gate, E = Emitter, IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 Ω; TVJ = 125°C RBSOA, Clamped in.
q q q A V W q IGBT with NPT (non punch through) structure reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery positive temperature coefficient of saturation voltage - optimum current distribution when paralleled Epoxy of TO 247 package meets UL 94V-0 Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 2.5 3.0 4 3.0 500 80 100 380 75 3.6 2.1 4 150 58 840 3.1 8 0.4 V V V mA mA nA ns ns ns ns mJ mJ nF nC A ns 0.42 K/W Applicatio.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 50N60A |
IXYS |
IGBT | |
2 | 50N60AS |
IXYS |
IGBT | |
3 | 50N60T |
Infineon |
IKW50N60T | |
4 | 50N65DM2 |
STMicroelectronics |
N-Channel MOSFET | |
5 | 50N65DM6 |
STMicroelectronics |
N-Channel MOSFET | |
6 | 50N02-09 |
Vishay Siliconix |
SUB50N02-09 | |
7 | 50N024 |
Vishay Siliconix |
SUD50N024 | |
8 | 50N02409PU54A |
Vishay Intertechnology |
SU50N02409PU54A | |
9 | 50N025-05P |
Vishay Siliconix |
SUD50N025-05P | |
10 | 50N03 |
Tuofeng |
Power Transistor | |
11 | 50N03 |
KIA |
N-CHANNEL MOSFET | |
12 | 50N03 |
GFO |
MOSFET |