50N60T - Infineon

50N60T IKW50N60T

TrenchStop® Series IKW50N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode      C        Very low VCE(sat) 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5s Designed for : - Frequency Converters - Uninterrupted Power Supply.

Features

tor-emitter voltage DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area (VCE  600V, Tj  175C) Diode forward current, limited by Tjmax TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time 3) Symbol VCE IC Value 600 80 2) Unit V A 50 ICpul s IF 100 50 IFpul s VGE tSC Ptot Tj Tstg 150 20 5 333 -40...+175 -55...+175 260 V s W C 150 150 VGE = 15V, VCC  400V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature.