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The UTC 3N80Z provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) < 4.2Ω @ VGS=10V, ID=1.5A * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness SYMBOL ORDERING INFORMATION Note: Or.
* RDS(ON) < 4.2Ω @ VGS=10V, ID=1.5A
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
ORDERING INFORMATION
Note:
Ordering Number
Lead Free
Halogen Free
3N80ZL-TF1-T
3N80ZG-TF1-T
3N80ZL-TN3-R
3N80ZG-TN3-R
Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1 TO-252
Pin Assignment 123 GDS GDS
Packing
Tube Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2018 Unisonic Technologies Co., Ltd
1 of 8
QW-R502-912.D
3N80Z
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYM.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3N80 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 3N80 |
nELL |
N-Channel Power MOSFET |
|
| 3 | 3N80 |
Unisonic Technologies |
N-CHANNEL MOSFET |
|
| 4 | 3N80A |
Samsung semiconductor |
SSS3N80A |
|
| 5 | 3N80C |
Fairchild Semiconductor |
FQP3N80C |
|
| 6 | 3N81 |
Micro Electronics |
(3N8x) Silicon Controlled Switches |
|
| 7 | 3N82 |
Micro Electronics |
(3N8x) Silicon Controlled Switches |
|
| 8 | 3N83 |
Micro Electronics |
(3N8x) Silicon Controlled Switches |
|
| 9 | 3N100E |
Motorola |
MTB3N100E |
|
| 10 | 3N1012 |
Infineon |
Power-Transistor |
|
| 11 | 3N10L26 |
Infineon |
Power-Transistor |
|
| 12 | 3N120-E3 |
UTC |
1200V N-CHANNEL POWER MOSFET |
|