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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power.
• 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V, ID = 1.5 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
June 2014
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ball.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3N80 |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 2 | 3N80 |
nELL |
N-Channel Power MOSFET |
|
| 3 | 3N80 |
Unisonic Technologies |
N-CHANNEL MOSFET |
|
| 4 | 3N80A |
Samsung semiconductor |
SSS3N80A |
|
| 5 | 3N80Z |
UTC |
N-CHANNEL MOSFET |
|
| 6 | 3N81 |
Micro Electronics |
(3N8x) Silicon Controlled Switches |
|
| 7 | 3N82 |
Micro Electronics |
(3N8x) Silicon Controlled Switches |
|
| 8 | 3N83 |
Micro Electronics |
(3N8x) Silicon Controlled Switches |
|
| 9 | 3N100E |
Motorola |
MTB3N100E |
|
| 10 | 3N1012 |
Infineon |
Power-Transistor |
|
| 11 | 3N10L26 |
Infineon |
Power-Transistor |
|
| 12 | 3N120-E3 |
UTC |
1200V N-CHANNEL POWER MOSFET |
|