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The UTC 3N120-E3 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES0 * RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A * Low Reverse Transfer Capacitance * Fast Switching Capability * Avalanche Energy Specified * Improved dv/dt Capability, High Ruggedness S.
* RDS(ON) ≤ 7.0 Ω @ VGS=10V, ID=1.5A
* Low Reverse Transfer Capacitance
* Fast Switching Capability
* Avalanche Energy Specified
* Improved dv/dt Capability, High Ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
3N120L-TA3-T
3N120G-TA3-T
TO-220
3N120L-TF1-T
3N120G-TF1-T
TO-220F1
3N120L-TQ2-T
3N120G-TQ2-T
TO-263
3N120L-TQ2-R
3N120G-TQ2-R
TO-263
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube Tube Tube Tape Reel
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3N124 |
ETC |
N-channel Transistor |
|
| 2 | 3N125 |
ETC |
N-channel Transistor |
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| 3 | 3N126 |
ETC |
N-channel Transistor |
|
| 4 | 3N128 |
Motorola |
MOSFET AMPLIFIER |
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| 5 | 3N128 |
General Electric Solid State |
Silicon MOS Transistor |
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| 6 | 3N100E |
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MTB3N100E |
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| 7 | 3N1012 |
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Power-Transistor |
|
| 8 | 3N10L26 |
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Power-Transistor |
|
| 9 | 3N140 |
ETC |
N-CHANNEL DUAL-GATE TRANSISTOR |
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| 10 | 3N142 |
ETC |
SILICON INSULATED GATE FIELD EFFECT TRANSISTOR |
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| 11 | 3N143 |
ETC |
Silicon MOS Transistor |
|
| 12 | 3N150 |
STMicroelectronics |
N-Channel MOSFET |
|