Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Current ID=3.0A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max) ·Fast Switching ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE M.
·Drain Current ID=3.0A@ TC=25℃
·Drain Source Voltage-
: VDSS= 800V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 4.5Ω(Max)
·Fast Switching
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching power supplies,converters,AC and DC motor controls
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
3
A
IDM
Drain Current-Single Plused
12
A
PD
Total Dissipation @TC=25℃
75
W
Tj
Max. Operating Junction Tem.
3N80 - Unisonic Technologies
The UTC 3N80 provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable fo.
3N80 - nELL
(3A, 800Volts) The Nell 3N80 is a three-terminal silicon device with current conduction capability of 3A, fast switchi.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3N80A |
Samsung semiconductor |
SSS3N80A |
|
| 2 | 3N80C |
Fairchild Semiconductor |
FQP3N80C |
|
| 3 | 3N80Z |
UTC |
N-CHANNEL MOSFET |
|
| 4 | 3N81 |
Micro Electronics |
(3N8x) Silicon Controlled Switches |
|
| 5 | 3N82 |
Micro Electronics |
(3N8x) Silicon Controlled Switches |
|
| 6 | 3N83 |
Micro Electronics |
(3N8x) Silicon Controlled Switches |
|
| 7 | 3N100E |
Motorola |
MTB3N100E |
|
| 8 | 3N1012 |
Infineon |
Power-Transistor |
|
| 9 | 3N10L26 |
Infineon |
Power-Transistor |
|
| 10 | 3N120-E3 |
UTC |
1200V N-CHANNEL POWER MOSFET |
|
| 11 | 3N124 |
ETC |
N-channel Transistor |
|
| 12 | 3N125 |
ETC |
N-channel Transistor |
|