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3N169 - ETC
3N169 (SILICON) 3N170 3N171 I I SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode transistors designed .
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3N161 |
Intersil Corporation |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
|
| 2 | 3N163 |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors |
|
| 3 | 3N163 |
Micross |
High Speed Switch |
|
| 4 | 3N164 |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors |
|
| 5 | 3N164 |
Micross |
High Speed Switch |
|
| 6 | 3N165 |
Calogic LLC |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
|
| 7 | 3N165 |
Micross |
Amplifier |
|
| 8 | 3N166 |
Calogic LLC |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
|
| 9 | 3N166 |
Micross |
Amplifier |
|
| 10 | 3N100E |
Motorola |
MTB3N100E |
|
| 11 | 3N1012 |
Infineon |
Power-Transistor |
|
| 12 | 3N10L26 |
Infineon |
Power-Transistor |
|