3N163 - Siliconix

3N163 P-Channel Enhancement-Mode MOS Transistors

3N163 SERIES P·Channel Enhancement·Mode MOS Transistors PRODUCT SUMMARY PART V(BR)OSS rOS(ON) 10 NUMBER (V) (fi) (mA) PACKAGE 3N163 -40 250 -50 TO·72 3N164 -3~ 300 -50 TO-72 Performance Curves: MRA (See Section 7) .:rSiliconix ..z;;JI incorporated TO·72 BOTTOM VIEW 1 DRAIN 2 GATE 3 SUBSTRATE, CASE 4 SOURCE = ABSOLUTE MAXIMUM RATINGS (TA 2.

Features

Gate-Body Leakage Zero Gate Voltage Drain Current Zero-Gate Voltage Source Current On-State Drain Current 3 V(BR)OSS VGS = 0 V, 10 = -10J.LA V(BR)SOS VGo =VBO = 0 V, Is = -10J.LA VGS(lh) VGS =Vos , 10 = -10J.LA V GS Vos = -15 V, 10 = -0.5 mA IGSS loss Isos 101ON) VOS = 0 V I VGS = -40 V TA = 125°C Vos = 0 V I VGS = -30 V TA = 125°C Vos = -15 V I VGS = 0 V TA = 125°C Vso = -20 V r V GO =VOB = 0 V TA = 125°C Vos = -15 V, VGS = -10 V Drain-Source On-Reslstance3 DYNAMlC rOSION) VGS = -20 V I 10 = -100J.LA TA = 125°C ~~~~:6~nductance 3 gf. Common Source Output Conduct.