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Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N165 / 3N166 FEATURES CORPORATION • Very High Impedance • High Gate Breakdown • Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . .
CORPORATION
• Very High Impedance
• High Gate Breakdown
• Low Capacitance
PIN CONFIGURATION
ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Transient Gate-Source Voltage (Note 3) . . . . . . . . . . . . . ±125 Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . .
3N165 - Micross
3N165 P-CHANNEL MOSFET The 3N165 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FO.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3N161 |
Intersil Corporation |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
|
| 2 | 3N163 |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors |
|
| 3 | 3N163 |
Micross |
High Speed Switch |
|
| 4 | 3N164 |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors |
|
| 5 | 3N164 |
Micross |
High Speed Switch |
|
| 6 | 3N166 |
Calogic LLC |
Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier |
|
| 7 | 3N166 |
Micross |
Amplifier |
|
| 8 | 3N169 |
Motorola Semiconductor |
(3N169 - 3N171) MOSFETs Switching |
|
| 9 | 3N169 |
ETC |
MOS FIELD-EFFECT TRANSISTORS |
|
| 10 | 3N100E |
Motorola |
MTB3N100E |
|
| 11 | 3N1012 |
Infineon |
Power-Transistor |
|
| 12 | 3N10L26 |
Infineon |
Power-Transistor |
|