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3N169 |
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| Part Number | 3N169 |
| Manufacturer | ETC |
| Description | 3N169 (SILICON) 3N170 3N171 I I SILICON N-CHANNEL MOS FIELD-EFFECT TRANSISTORS Enhancement Mode transistors designed for low-power switching applications. I • Low Switching Voltages - VGS(th)';; 3.... |
| Features |
... |
| Document |
 3N169 Data Sheet
PDF 342.80KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3N161 |
Intersil Corporation |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
|
| 2 | 3N163 |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors |
|
| 3 | 3N163 |
Micross |
High Speed Switch |
|
| 4 | 3N164 |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors |
|
| 5 | 3N164 |
Micross |
High Speed Switch |
|