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3N165 |
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| Part Number | 3N165 |
| Manufacturer | Micross |
| Description | 3N165 P-CHANNEL MOSFET The 3N165 is a monolithic dual enhancement mode P-Channel Mosfet FEATURES DIRECT REPLACEMENT FOR INTERSIL 3N165 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maxi... |
| Features |
DIRECT REPLACEMENT FOR INTERSIL 3N165 ABSOLUTE MAXIMUM RATINGS1@ 25°C (unless otherwise noted) Maximum Temperatures The hermetically sealed TO-78 package is well suited Storage Temperature ‐65°C to +200°C for high reliability and harsh environment applications. Operating Junction Temperature ‐55°C to +150°C Lead Temperature (Soldering, 10 sec.) +300°C (See Packaging Information). Maximum Power Dissipation Continuous Power Dissipation (one side) 300mW 3N165 Features: Total Derating above 25°C 4.2 mW/°C MAXIMUM CURRENT Very high Input Impedance Drain Current 50mA Low Capacita... |
| Document |
 3N165 Data Sheet
PDF 377.76KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3N161 |
Intersil Corporation |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
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| 2 | 3N163 |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors |
|
| 3 | 3N163 |
Micross |
High Speed Switch |
|
| 4 | 3N164 |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors |
|
| 5 | 3N164 |
Micross |
High Speed Switch |
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