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3DG182 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality .
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: (Ta = 25°C ) Parameter name Specifications Symbols Unit ABCDE FGH I J Test Condition Total Dissipation Ptot mW 700 Ta=25°C Max. Collector Current ICM mA 300 Junction Temperature Tjm °C 175 Storage Temperature Tstg °C -55~+175 C-B Breakdown Vol.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DG181 |
Qunli Electric |
NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor |
|
| 2 | 3DG1815 |
LZG |
SILICON NPN TRANSISTOR |
|
| 3 | 3DG1815M |
LZG |
SILICON NPN TRANSISTOR |
|
| 4 | 3DG100 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 5 | 3DG1008 |
LZG |
SILICON NPN TRANSISTOR |
|
| 6 | 3DG101 |
ETC |
Silicon NPN high frequency low power transistor |
|
| 7 | 3DG101 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|
| 8 | 3DG102 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 9 | 3DG110 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|
| 10 | 3DG111 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|
| 11 | 3DG12 |
Shaanxi Qunli Electric |
NPN Silicon High Frequency Middle Power Transistor |
|
| 12 | 3DG1213 |
LZG |
SILICON NPN TRANSISTOR |
|