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3DG182 |
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| Part Number | 3DG182 |
| Manufacturer | Qunli Electric |
| Description | 3DG182 NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, lig... |
| Features |
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
(Ta = 25°C )
Parameter name
Specifications Symbols Unit
ABCDE FGH I
J
Test Condition
Total Dissipation
Ptot mW
700
Ta=25°C
Max. Collector Current ICM mA
300
Junction Temperature Tjm °C
175
Storage Temperature Tstg °C
-55~+175
C-B Breakdown Vol... |
| Document |
 3DG182 Data Sheet
PDF 33.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DG181 |
Qunli Electric |
NPN Silicon High Reverse Voltage High Frequency Middle Power Transistor |
|
| 2 | 3DG1815 |
LZG |
SILICON NPN TRANSISTOR |
|
| 3 | 3DG1815M |
LZG |
SILICON NPN TRANSISTOR |
|
| 4 | 3DG100 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 5 | 3DG1008 |
LZG |
SILICON NPN TRANSISTOR |
|