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3DG101 NPN PCM ICM Tjm Tstg V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO VBEsat VCEsat hFE fT ICB=0.1mA ICE=0.1mA IEB=0.1mA VCB=10V VCE=10V VEB=1.5V IC=10mA IB=1mA VCE=10V IC=0.5mA VCE=10V IC=3mA fo=100MH z A ≥20 ≥15 BC 100 20 175 -55~150 ≥30 ≥40 ≥20 ≥30 ≥4.0 ≤0.03 ≤0.05 ≤0.01 ≤1.0 ≤0.35 30~270 ≥150 D mW mA ℃ ℃ ≥50 V ≥40 V V μA μA μA V M.
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3DG101 - Qunli Electric
3DG101, 3DG110, 3DG111 NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology str.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DG100 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 2 | 3DG1008 |
LZG |
SILICON NPN TRANSISTOR |
|
| 3 | 3DG102 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 4 | 3DG110 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|
| 5 | 3DG111 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|
| 6 | 3DG12 |
Shaanxi Qunli Electric |
NPN Silicon High Frequency Middle Power Transistor |
|
| 7 | 3DG1213 |
LZG |
SILICON NPN TRANSISTOR |
|
| 8 | 3DG1213A |
LZG |
SILICON NPN TRANSISTOR |
|
| 9 | 3DG122 |
Shaanxi Qunli Electric |
NPN Silicon High Frequency Middle Power Transistor |
|
| 10 | 3DG130 |
Shaanxi Qunli |
NPN Silicon High Frequency Middle Power Transistor |
|
| 11 | 3DG13007 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 12 | 3DG140 |
Qunli Electric |
NPN Silicon High FrequencyLow Power Transistor |
|