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3DG101, 3DG110, 3DG111 NPN Silicon High Frequency Low Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: G.
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Specifications (Ta = 25°C ) Parameter name Symbols Unit 3DG101 3DG110 3DG111 C-B Breakdown Voltage V(BR)CBO V C-E Breakdown Voltage V(BR)CEO V E-Base Breakdown Voltage V(BR)EBO V Total Dissipation Ptot mW Max. Collector Current ICM mA Junction T.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DG110 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|
| 2 | 3DG100 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 3 | 3DG1008 |
LZG |
SILICON NPN TRANSISTOR |
|
| 4 | 3DG101 |
ETC |
Silicon NPN high frequency low power transistor |
|
| 5 | 3DG101 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|
| 6 | 3DG102 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 7 | 3DG12 |
Shaanxi Qunli Electric |
NPN Silicon High Frequency Middle Power Transistor |
|
| 8 | 3DG1213 |
LZG |
SILICON NPN TRANSISTOR |
|
| 9 | 3DG1213A |
LZG |
SILICON NPN TRANSISTOR |
|
| 10 | 3DG122 |
Shaanxi Qunli Electric |
NPN Silicon High Frequency Middle Power Transistor |
|
| 11 | 3DG130 |
Shaanxi Qunli |
NPN Silicon High Frequency Middle Power Transistor |
|
| 12 | 3DG13007 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|