Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG130 NPN Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amp.
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611 TECHNICAL DATA: Parameter name Symbols Unit Total Dissipation Ptot mW Max. Collector Current ICM mA Junction Temperature Tjm °C Storage Temperature Tstg °C C-B Breakdown Voltage V(BR)CBO V C-E Breakdown Voltage V(BR)CEO V E-B Breakdown Voltage V(BR)EBO V Collect.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3DG13007 |
Inchange Semiconductor |
Silicon NPN Power Transistor | |
2 | 3DG100 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor | |
3 | 3DG1008 |
LZG |
SILICON NPN TRANSISTOR | |
4 | 3DG101 |
ETC |
Silicon NPN high frequency low power transistor | |
5 | 3DG101 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor | |
6 | 3DG102 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor | |
7 | 3DG110 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor | |
8 | 3DG111 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor | |
9 | 3DG12 |
Shaanxi Qunli Electric |
NPN Silicon High Frequency Middle Power Transistor | |
10 | 3DG1213 |
LZG |
SILICON NPN TRANSISTOR | |
11 | 3DG1213A |
LZG |
SILICON NPN TRANSISTOR | |
12 | 3DG122 |
Shaanxi Qunli Electric |
NPN Silicon High Frequency Middle Power Transistor |