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3DG130 |
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| Part Number | 3DG130 |
| Manufacturer | Shaanxi Qunli |
| Description | Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DG130 NPN Silicon High Frequency Middle Power Transistor Features: 1. Using epitaxy planar technology structure. High... |
| Features |
1. Using epitaxy planar technology structure. High working frequency. Metallic packaging. 2. Small volume, light weight, easy installation. 3. Use for high frequency oscillation, high frequency small signal amplification, low power source
adjustment circuit. 4. Quality Class: GS, G. Implementation of standards: QZJ840611
TECHNICAL DATA:
Parameter name
Symbols Unit
Total Dissipation
Ptot mW
Max. Collector Current ICM mA
Junction Temperature
Tjm °C
Storage Temperature
Tstg °C
C-B Breakdown Voltage V(BR)CBO V
C-E Breakdown Voltage V(BR)CEO V
E-B Breakdown Voltage V(BR)EBO V
Collect... |
| Document |
 3DG130 Data Sheet
PDF 21.10KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DG13007 |
Inchange Semiconductor |
Silicon NPN Power Transistor |
|
| 2 | 3DG100 |
Shaanxi Qunli |
NPN Silicon High Frequency Low Power Transistor |
|
| 3 | 3DG1008 |
LZG |
SILICON NPN TRANSISTOR |
|
| 4 | 3DG101 |
ETC |
Silicon NPN high frequency low power transistor |
|
| 5 | 3DG101 |
Qunli Electric |
NPN Silicon High Frequency Low Power Transistor |
|