3DD303A - Inchange

3DD303A Silicon Power Transistor

·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-.

Features

Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 50V; IE= 0 ICEO Collector Cutoff Current VCE= 25V; IB= 0 hFE DC Current Gain IC= 2A; VCE= 5V 3DD303A MIN TYP. MAX UNIT 40 V 4 V 60 V 1.5 V 1.5 V 0.5 mA 0.1 mA 40 250 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any t.