NPN ○R 3DD3010A1 1 : 3DD3010A1 NPN ,, ,、 。 :TO-92 , RoHS 。 VCEO IC Ptot (Ta=25℃) 2 : TO-92 480 0.5 0.8 V A W ● ● ● ● ● 1 2 3 1. B 2. C 3. E 3 : 、, 。 B C E (Pb) (Hg) (Cd) (Cr(VI)) (PBB) (PBDE) () ≤0.1% ≤0.1% ≤0.01% ≤0.1% ≤0.1% ≤0.1% ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ ○ .
0.6 1.5 4.5 1 1
mA mA mA V V V
V V μs μs μs MHz
2 5
2008
5
1 ()
○R 3DD3010A1
2 Ptot
– T
IC (A)
1
0.1
0.01
0.001 0.1
1
Ta=25℃
Ptot (W) 0.8 0.6 0.4
0.2
10 100 VCE (V)
0 0
Ptot-Ta
50 100 T(℃)
3 (IC -VCE)
Ic(A)
Ta=25℃
4 hFE - IC
hhFEFE
Ta=125℃
VCE=5V
0.1
10
Ta=25℃ Ta=-55℃
IB=1mA
1
0
5
VCE(V)
0.001 0.01
0.1 Ic(A)
3 5
2008
○R 3DD3010A1
5 VCEsat - IC
6 VBEsat - IC
VCEs1at(0V)
1
0.1
0.01 0.01
Ta=125℃
0.1
Ta=25℃
IC/IB=B 5
1 Ic(A10)
VBEsa1t(.V2) 1.1 1 0.9 0.8 0.7 0.6 0.01
Ta=25℃
Ta=125℃
IC/IB=B 5
0.1 1 Ic(1A0)
7 ts -Ic (UI9600)
ts(μs6) .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3DD3015A1 |
Huajing Microelectronics |
Silicon NPN Transistor | |
2 | 3DD3015A1-H |
Huajing Microelectronics |
Silicon NPN bipolar transistor | |
3 | 3DD3015A3 |
Huajing Microelectronics |
Silicon NPN Transistor | |
4 | 3DD301B |
Inchange |
Silicon Power Transistor | |
5 | 3DD301C |
Inchange |
Silicon Power Transistor | |
6 | 3DD301D |
Inchange |
Silicon Power Transistor | |
7 | 3DD3020A3 |
Huajing Microelectronics |
Silicon NPN Transistor | |
8 | 3DD3020A3-H |
Huajing Microelectronics |
Silicon NPN bipolar transistor | |
9 | 3DD3020A4 |
Huajing Microelectronics |
Silicon NPN bipolar transistor | |
10 | 3DD3020A6 |
Huajing Microelectronics |
Silicon NPN Transistor | |
11 | 3DD303A |
Inchange |
Silicon Power Transistor | |
12 | 3DD303B |
Inchange |
Silicon Power Transistor |