·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 50V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max) @IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for B/W TV vertical output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-.
Emitter Breakdown Voltage IC= 5mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 5mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff Current VCB= 50V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 3A; VCE= 5V 3DD301B MIN TYP. MAX UNIT 50 V 4 V 80 V 2.0 V 0.5 mA 0.1 mA 30 250 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3DD3010A1 |
Huajing Microelectronics |
Silicon NPN Transistor | |
2 | 3DD3015A1 |
Huajing Microelectronics |
Silicon NPN Transistor | |
3 | 3DD3015A1-H |
Huajing Microelectronics |
Silicon NPN bipolar transistor | |
4 | 3DD3015A3 |
Huajing Microelectronics |
Silicon NPN Transistor | |
5 | 3DD301C |
Inchange |
Silicon Power Transistor | |
6 | 3DD301D |
Inchange |
Silicon Power Transistor | |
7 | 3DD3020A3 |
Huajing Microelectronics |
Silicon NPN Transistor | |
8 | 3DD3020A3-H |
Huajing Microelectronics |
Silicon NPN bipolar transistor | |
9 | 3DD3020A4 |
Huajing Microelectronics |
Silicon NPN bipolar transistor | |
10 | 3DD3020A6 |
Huajing Microelectronics |
Silicon NPN Transistor | |
11 | 3DD303A |
Inchange |
Silicon Power Transistor | |
12 | 3DD303B |
Inchange |
Silicon Power Transistor |