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3DD303A |
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| Part Number | 3DD303A |
| Manufacturer | Inchange |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 40V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·Minimum Lot-to-Lot variations for robust device performance and reliabl... |
| Features |
Emitter Breakdown Voltage IC= 5mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 1mA; IE= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 0.3A
ICBO
Collector Cutoff Current
VCB= 50V; IE= 0
ICEO
Collector Cutoff Current
VCE= 25V; IB= 0
hFE
DC Current Gain
IC= 2A; VCE= 5V
3DD303A
MIN TYP. MAX UNIT
40
V
4
V
60
V
1.5
V
1.5
V
0.5 mA
0.1 mA
40
250
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any t... |
| Document |
 3DD303A Data Sheet
PDF 200.16KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3DD303B |
Inchange |
Silicon Power Transistor |
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| 2 | 3DD303C |
Inchange |
Silicon Power Transistor |
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| 3 | 3DD3010A1 |
Huajing Microelectronics |
Silicon NPN Transistor |
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| 4 | 3DD3015A1 |
Huajing Microelectronics |
Silicon NPN Transistor |
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| 5 | 3DD3015A1-H |
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Silicon NPN bipolar transistor |
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