Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD164(166), 3DD167(169) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of.
1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: Parameter name Symbols Unit Collector-Emitter Voltage VCEO V Collector-Emitter Breakdown Voltage V(BR)CEO V C-Base Breakdown Voltage V(BR)CBO V Emitter-Base Voltage Max. Collector Current Max. Collector Dissipation Junc.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3DD164 |
ETC |
Low-power silicon NPN transistor | |
2 | 3DD164 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
3 | 3DD164F |
INCHANGE |
NPN Transistor | |
4 | 3DD166 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
5 | 3DD167 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
6 | 3DD167A |
INCHANGE |
NPN Transistor | |
7 | 3DD167B |
INCHANGE |
NPN Transistor | |
8 | 3DD167C |
INCHANGE |
NPN Transistor | |
9 | 3DD167D |
INCHANGE |
NPN Transistor | |
10 | 3DD167E |
INCHANGE |
NPN Transistor | |
11 | 3DD167F |
INCHANGE |
NPN Transistor | |
12 | 3DD10 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |