·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt.
PARAMETER CONDITIONS BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0 BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 BVEBO Emitter-Base Sustaining Voltage IE= 10mA; IC=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A VBE(sat) Collector-Emitter Saturation Voltage IC= 7.5A; IB= 0.75A ICEO Collector Cutoff Current VCE=100V; IE= 0 hFE DC Current Gain IC= 7.5A; VCE= 5V MIN MAX UNIT 400 V 300 V 5 V 1.5 V 1.8 V 2 mA 15 120 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notificat.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3DD167 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
2 | 3DD167A |
INCHANGE |
NPN Transistor | |
3 | 3DD167B |
INCHANGE |
NPN Transistor | |
4 | 3DD167C |
INCHANGE |
NPN Transistor | |
5 | 3DD167D |
INCHANGE |
NPN Transistor | |
6 | 3DD167E |
INCHANGE |
NPN Transistor | |
7 | 3DD164 |
ETC |
Low-power silicon NPN transistor | |
8 | 3DD164 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
9 | 3DD164F |
INCHANGE |
NPN Transistor | |
10 | 3DD166 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
11 | 3DD169 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
12 | 3DD10 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |