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Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD164(166), 3DD167(169) NPN Silicon Low Frequency High Power Transistor Features: 1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of.
1. Using triple-diffusion process.Excellent capacity in anti-burnout.Excellent second breakdown capacity. 2. Good temperature stability.Excellent thermal fatigue capability. 3. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 4. Use for Low-speed switch,low frequency power amplify,power adjustment. 5. Quality Class: JP, JT, JCT, GS, G, G+ TECHNICAL DATA: Parameter name Symbols Unit Collector-Emitter Voltage VCEO V Collector-Emitter Breakdown Voltage V(BR)CEO V C-Base Breakdown Voltage V(BR)CBO V Emitter-Base Voltage Max. Collector Current Max. Collector Dissipation Junc.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 3DD164 |
ETC |
Low-power silicon NPN transistor |
|
| 2 | 3DD164 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 3 | 3DD164F |
INCHANGE |
NPN Transistor |
|
| 4 | 3DD167 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 5 | 3DD167A |
INCHANGE |
NPN Transistor |
|
| 6 | 3DD167B |
INCHANGE |
NPN Transistor |
|
| 7 | 3DD167C |
INCHANGE |
NPN Transistor |
|
| 8 | 3DD167D |
INCHANGE |
NPN Transistor |
|
| 9 | 3DD167E |
INCHANGE |
NPN Transistor |
|
| 10 | 3DD167F |
INCHANGE |
NPN Transistor |
|
| 11 | 3DD169 |
Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|
| 12 | 3DD10 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |
|