·With TO-3 packaging ·Large collector current ·Low collector saturation voltage ·High power dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter ·Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Volt.
ERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCEO Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0 BVCBO Collector-Base Sustaining Voltage IC= 5mA; IE= 0 BVEBO Emitter-Base Sustaining Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A ICBO Collector Cutoff Current VCB= 500V; IE= 0 hFE DC Current Gain IC= 1.5A; VCE= 10V MIN MAX UNIT 600 V 1200 V 8 V 4 V 0.1 mA 10 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 3DD104A |
INCHANGE |
NPN Transistor | |
2 | 3DD104B |
INCHANGE |
NPN Transistor | |
3 | 3DD104C |
INCHANGE |
NPN Transistor | |
4 | 3DD104E |
INCHANGE |
NPN Transistor | |
5 | 3DD10 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
6 | 3DD100 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor | |
7 | 3DD100A |
INCHANGE |
NPN Transistor | |
8 | 3DD100B |
INCHANGE |
NPN Transistor | |
9 | 3DD100C |
INCHANGE |
NPN Transistor | |
10 | 3DD100D |
INCHANGE |
NPN Transistor | |
11 | 3DD100E |
INCHANGE |
NPN Transistor | |
12 | 3DD101 |
Shaanxi Qunli Electric |
NPN Silicon Low Frequency High Power Transistor |