Recherchez avec le numéro de pièce ainsi que le fabricant ou la description
GenX3TM 600V IGBTs High-Speed PT IGBTs for 40-100kHz Switching IXGA30N60C3 IXGP30N60C3 IXGH30N60C3 Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped Inducti.
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 30N60 |
IXYS |
High speed IGBT |
|
| 2 | 30N60A |
IXYS |
High speed IGBT |
|
| 3 | 30N60A4D |
Fairchild Semiconductor |
HGT1N30N60A4D |
|
| 4 | 30N60B3D |
Fairchild Semiconductor |
HGTG30N60B3D |
|
| 5 | 30N65DM6 |
STMicroelectronics |
N-channel Power MOSFET |
|
| 6 | 30N05 |
Inchange Semiconductor |
N-Channel MOSFET |
|
| 7 | 30N06 |
Inchange Semiconductor |
N-Channel MOSFET |
|
| 8 | 30N06 |
UTC |
N-CHANNEL POWER MOSFET |
|
| 9 | 30N06-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|
| 10 | 30N06G |
UTC |
N-CHANNEL POWER MOSFET |
|
| 11 | 30N06L |
UTC |
N-CHANNEL POWER MOSFET |
|
| 12 | 30N06V-Q |
Unisonic Technologies |
N-CHANNEL POWER MOSFET |
|