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The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. Internal schematic diagram Order codes Part Number 2STW4468 Marking 2STW4468 Package TO-247 Packing.
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High breakdown voltage VCEO=140V Complementary to 2STW1695 Fast-switching speed Typical ft =20MHz Fully characterized at 125 oC In compliance with the 2002/93/EC European Directive TO-247
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Applications
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Audio power amplifier
Description
The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage.
Internal schematic diagram
Order codes
Part Number 2STW4468 Marking 2STW4468 Pac.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2STW4466 |
STMicroelectronics |
High power NPN epitaxial planar bipolar transistor |
|
| 2 | 2STW100 |
ST Microelectronics |
Power transistors |
|
| 3 | 2STW100 |
INCHANGE |
NPN Transistor |
|
| 4 | 2STW1693 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor |
|
| 5 | 2STW1695 |
ST Microelectronics |
High Power PNP Epitaxial Planar Bipolar Transistor |
|
| 6 | 2STW200 |
ST Microelectronics |
Power Transistor |
|
| 7 | 2STW200 |
INCHANGE |
PNP Transistor |
|
| 8 | 2ST1480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors |
|
| 9 | 2ST15300 |
STMicroelectronics |
Rad-Hard NPN bipolar transistors |
|
| 10 | 2ST2121 |
STMicroelectronics |
High power PNP epitaxial planar bipolar transistor |
|
| 11 | 2ST2480 |
ST Microelectronics |
(2ST1480 / 2ST2480) Complementary power transistors |
|
| 12 | 2ST31A |
STMicroelectronics |
Low voltage NPN power transistor |
|