2STW4466 - STMicroelectronics

2STW4466 High power NPN epitaxial planar bipolar transistor

The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STW4466 Packag.

Features

■ High breakdown voltage VCEO = www.DataSheet4U.com
■ Complementary to 2STW1693
■
■ 80 V Typical ft = 20 MHz Fully characterized at 125 oC Applications
■ 3 2 1 Audio power amplifier TO-247 Description The device is a NPN transistor manufactured in low voltage planar technology using base island layout. The resulting transistor shows good gain linearity coupled with low VCE(sat) behaviour. Recommended for 40 W to 70 W high fidelity audio frequency amplifier output stage. Figure 1. Internal schematic diagram Table 1. Device summary Marking 2STW4466 Package TO-247 Packaging Tube Order co.