2SK3659 - NEC

2SK3659 SWITCHING N-CHANNEL POWER MOSFET

The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3659 PACKAGE Isolated TO-220 FEATURES •4.5V drive available. •Low on-state resistance, RDS(on)1 = .

Features

a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3659 PACKAGE Isolated TO-220 FEATURES
•4.5V drive available.
•Low on-state resistance, RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A)
•Low gate charge, QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A)
•Built-in gate protection diode.
•Avalanche capability ratings.
•Isolated TO-220 package. ABSOLUTE MAXIMUM RATING (TA = 25°C) Drain to source voltage (VGS = 0 V) Gate to source voltage (V.