The 2SK3653B is suitable for converter of ECM. General-purpose product. 0.2 PACKAGE DRAWING (Unit: mm) 0.3 ±0.05 0.13 +0.1 –0.05 1.2 ±0.1 • Low noise: −108.5 dB TYP. (VDD = 2.0 V, C = 5 pF, RL = 2.2 kΩ) • Especially suitable for audio and telephone • Super thin thickness package: t = 0.37 mm TYP. 0.8 ±0.1 FEATURES 3 0 to 0.05 0.45 0.45 MAX. 0.4 1.4.
3
0 to 0.05
0.45
0.45 MAX. 0.4
1.4 ±0.1
ORDERING INFORMATION
PART NUMBER 2SK3653B PACKAGE 3pXSOF (0814)
0.2 +0.1
–0
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = −1.0 V) Gate to Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature VDSX VGDO ID IG PT Tj Tstg 20 −20 10 10 100 125 −55 to +125 V V mA mA mW °C °C
EQUIVALENT CIRCUIT
2
3 1 1: Source 2: Drain 3: Gate
Caution Please take care of ESD (Electro Static Discharge) when you handle the device in this document.
The information in this document is subject to .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3653C |
NEC |
MOSFET | |
2 | 2SK365 |
Toshiba Semiconductor |
N-Channel MOSFET | |
3 | 2SK3650-01L |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
4 | 2SK3650-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
5 | 2SK3650-01S |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
6 | 2SK3650-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
7 | 2SK3650-01SJ |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
8 | 2SK3650-01SJ |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
9 | 2SK3651-01R |
Inchange Semiconductor |
N-Channel MOSFET Transistor | |
10 | 2SK3651-01R |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET | |
11 | 2SK3652 |
Guangdong Kexin Industrial |
N-channel Enhancement Mode MOSFET | |
12 | 2SK3652 |
Panasonic |
N-channel enhancement mode MOSFET |