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·motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 200 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 25 A IDM Drain Current-Single Pluse 100 A PD Total Dissipation @TC=25℃ 85 W TJ Max. Operating Junction Temp.
·Drain Current : ID= 25A@ TC=25℃
·Drain Source Voltage
: VDSS= 200V(Min)
·Static Drain-Source On-Resistance
: RDS(on) = 100mΩ(Max) @ VGS= 10V
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
200
V
VGS
Gate-Source Voltage-Continuous
±30
V
ID
Drain Current-Continuous
25
A
IDM
Drain Current-Single Pluse
100
A
PD
Total Dissipation @TC=25℃
85
W
TJ
Max. O.
2SK3651-01R - Fuji Electric
www.DataSheet4U.com 2SK3651-01R FUJI POWER MOSFET Super FAP-G Series Features High speed switching Low on-resistance N.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2SK365 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SK3650-01L |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 3 | 2SK3650-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 4 | 2SK3650-01S |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK3650-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
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| 6 | 2SK3650-01SJ |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
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| 7 | 2SK3650-01SJ |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
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| 8 | 2SK3652 |
Guangdong Kexin Industrial |
N-channel Enhancement Mode MOSFET |
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| 9 | 2SK3652 |
Panasonic |
N-channel enhancement mode MOSFET |
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| 10 | 2SK3653B |
NEC |
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| 11 | 2SK3653C |
NEC |
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| 12 | 2SK3656 |
Toshiba Semiconductor |
N-Channel MOSFET |
|