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2SK3659 |
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| Part Number | 2SK3659 |
| Manufacturer | NEC |
| Description | The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with... |
| Features |
a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
ORDERING INFORMATION
PART NUMBER 2SK3659 PACKAGE Isolated TO-220
FEATURES
•4.5V drive available. •Low on-state resistance, RDS(on)1 = 5.7 mΩ MAX. (VGS = 10 V, ID = 40 A) •Low gate charge, QG = 32 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 65 A) •Built-in gate protection diode. •Avalanche capability ratings. •Isolated TO-220 package. ABSOLUTE MAXIMUM RATING (TA = 25°C) Drain to source voltage (VGS = 0 V) Gate to source voltage (V... |
| Document |
 2SK3659 Data Sheet
PDF 103.97KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2SK365 |
Toshiba Semiconductor |
N-Channel MOSFET |
|
| 2 | 2SK3650-01L |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 3 | 2SK3650-01L |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|
| 4 | 2SK3650-01S |
Inchange Semiconductor |
N-Channel MOSFET Transistor |
|
| 5 | 2SK3650-01S |
Fuji Electric |
N-CHANNEL SILICON POWER MOSFET |
|