The 2SK3115B is N-Channel MOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. ORDERING INFORMATION PART NUMBER PACKAGE 2SK3115B-S17-AY Note Isolated TO-220 Note Pb-free (This product does not contain Pb in External electrode.) FEA.
a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER
PACKAGE
2SK3115B-S17-AY Note
Isolated TO-220
Note Pb-free (This product does not contain Pb in External electrode.)
FEATURES
• Low gate charge QG = 21 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating : ±30 V
• Low on-state resistance
RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to S.
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---|---|---|---|---|
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8 | 2SK3113B |
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9 | 2SK3114 |
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10 | 2SK3116 |
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11 | 2SK3116 |
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