2SK3115 - NEC

2SK3115 SWITCHING N-CHANNEL POWER MOSFET

The 2SK3115 is N-Channel DMOS FET device that features a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A) • Gate voltage rating ±30 V • Low on-state resistance RDS(on) = 1.2 Ω MAX. (VG.

Features

a low gate charge and excellent switching haracteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES
• Low gate charge QG = 26 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 6.0 A)
• Gate voltage rating ±30 V
• Low on-state resistance RDS(on) = 1.2 Ω MAX. (VGS = 10 V, ID = 3.0 A)
• Avalanche capability ratings ORDERING INFORMATION PART NUMBER 2SK3115 PACKAGE Isolated TO-220 5 (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current .