2SK3077 - Toshiba Semiconductor

2SK3077 N-Channel MOSFET

www.DataSheet4U.com 2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm l Output Power l Gain l Drain Efficiency : PO = 15.0 dBmW (Min.) : GP = 15.0 dB (Min.) : ηD = 20% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Power Di.

Features

MIN 15.0 — 15.0 0.25 — — TYP. — 20.0 — — — — MAX — — — 1.25 10 5 UNIT dBmW % dB V µA µA CAUTION This transistor is the electrostatic sensitive device. Please handle with caution. RF OUTPUT POWER TEST FIXTURE 2 DataSheet 4 U .com 2001-12-26 www.DataSheet4U.com 2SK3077 CAUTION These are only typical curves and devices are not necessarily guaranteed at these curves. 3 DataSheet 4 U .com 2001-12-26 www.DataSheet4U.com 2SK3077 RESTRICTIONS ON PRODUCT USE 000707EAA
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