Ordering number : ENN7224 2SK3072 N-Channel Silicon MOSFET 2SK3072 Ultrahigh-Speed Switching Applications Features • • Package Dimensions unit : mm 2091A [2SK3072] 0.5 0.4 0.16 0 to 0.1 Ultrahigh-speed switching. Low-voltage drive. 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltag.
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Package Dimensions
unit : mm 2091A
[2SK3072]
0.5
0.4 0.16 0 to 0.1
Ultrahigh-speed switching. Low-voltage drive.
3
1 0.95 0.95 2 1.9 2.9
0.5
1.5 2.5
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions
0.8 1.1
1 : Gate 2 : Source 3 : Drain SANYO : CP
Ratings 450 ± 10 30 120 250 150 --55 to +150
Unit V V mA mA mW °C °C
Electrical Characteristics at .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3070 |
Hitachi Semiconductor |
N-Channel MOSFET | |
2 | 2SK3070L |
Hitachi Semiconductor |
N-Channel MOSFET | |
3 | 2SK3070S |
Hitachi Semiconductor |
N-Channel MOSFET | |
4 | 2SK3074 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK3075 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK3076 |
Hitachi Semiconductor |
N-Channel MOSFET | |
7 | 2SK3076L |
Hitachi Semiconductor |
N-Channel MOSFET | |
8 | 2SK3076S |
Hitachi Semiconductor |
N-Channel MOSFET | |
9 | 2SK3077 |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | 2SK3077A |
Toshiba Semiconductor |
N-Channel MOSFET | |
11 | 2SK3078 |
Toshiba Semiconductor |
SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR | |
12 | 2SK3079 |
Toshiba Semiconductor |
N-Channel MOSFET |