2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th. Edition February 1999 Features • Low on-resistance R DS(on) = 4.5 mΩ typ. • Low drive current • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Datasheet Title Absolute Maximum.
• Low on-resistance R DS(on) = 4.5 mΩ typ.
• Low drive current
• 4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 4
D 1 1
2
3
G
2
3
1. Gate 2. Drain 3. Source 4. Drain
S
Datasheet Title
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg
Note 3 Note 3 Note 2 Note 1
Ratings 40 ±20 75 300 75 50 333 100 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | 2SK3070L |
Hitachi Semiconductor |
N-Channel MOSFET | |
2 | 2SK3070S |
Hitachi Semiconductor |
N-Channel MOSFET | |
3 | 2SK3072 |
Sanyo Semicon Device |
N-Channel MOSFET | |
4 | 2SK3074 |
Toshiba Semiconductor |
N-Channel MOSFET | |
5 | 2SK3075 |
Toshiba Semiconductor |
N-Channel MOSFET | |
6 | 2SK3076 |
Hitachi Semiconductor |
N-Channel MOSFET | |
7 | 2SK3076L |
Hitachi Semiconductor |
N-Channel MOSFET | |
8 | 2SK3076S |
Hitachi Semiconductor |
N-Channel MOSFET | |
9 | 2SK3077 |
Toshiba Semiconductor |
N-Channel MOSFET | |
10 | 2SK3077A |
Toshiba Semiconductor |
N-Channel MOSFET | |
11 | 2SK3078 |
Toshiba Semiconductor |
SILICON N CHANNEL MOS TYPE FIELD EFFECT TRANSISTOR | |
12 | 2SK3079 |
Toshiba Semiconductor |
N-Channel MOSFET |